Effect of asymmetric strain relaxation on dislocation relaxation processes in heteroepitaxial semiconductors
Author:
Affiliation:
1. Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975789
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