Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation-Reference-Cited by-同舟云学术

Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation

Published:2016-09-02 Issue:36 Volume:120 Page:20333-20340
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

David Thomas¹,Liu Kailang¹,Fernandez Sara²,Richard Marie-Ingrid¹²,Ronda Antoine¹,Favre Luc¹,Abbarchi Marco¹,Benkouider Abdelmalek¹,Aqua Jean-Noël³,Peters Matthew⁴,Voorhees Peter⁴,Thomas Olivier¹,Berbezier Isabelle¹

Affiliation:

1. Aix-Marseille Univ. CNRS IM2NP, St Jérôme, F-13397 Marseille, France

2. ESRF, ID01 beamline, CS 40220, 38043 Grenoble Cedex 9, France

3. INSP, Boite 840, 4 pl. Jussieu, 75005 Paris, France

4. Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60201, United States

Funder

NANOALLIANCE Project

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b06037

Reference36 articles.

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5. Chau, R.; Kavalieros, J.; Doyle, B.; Murthy, A.; Paulsen, N.; Lionberger, D.; Barlage, D.; Arghavani, R.; Roberds, B.; Doczy, M.A 50 nm Depleted-Substrate CMOS Transistor (DST). International Electron Devices Meeting, 2001, IEDM ’01; Technical Digest, 2001; pp29.1.1–29.1.4.

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