Author:
Roccaforte F.,Libertino S.,Raineri V.,Ruggiero A.,Massimino V.,Calcagno L.
Subject
General Physics and Astronomy
Reference30 articles.
1. Semiconductors and Semimetals;Park Y. S.,1998
2. Silicon carbide high-power devices
3. K. Wongchotigul, in Properties of Silicon Carbide, edited by G. L. Harris (INSPEC, London∕IEE, London, 1995), pp. 157–161.
4. Nitrogen and aluminum implantation in high resistivity silicon carbide
5. Low-dose n-type nitrogen implants in 4H-SiC
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