Low-dose n-type nitrogen implants in 4H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1531838
Reference14 articles.
1. Activation of nitrogen implants in 6H-SiC
2. Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide
3. Counter-doped MOSFETs of 4H-SiC
4. Investigation of Lateral RESURF, 6H-SiC MOSFETs
5. A 475-V high-voltage 6H-SiC lateral MOSFET
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3. On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements;Materials Science Forum;2019-07
4. High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates;Japanese Journal of Applied Physics;2018-05-24
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