On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

Abstract

Aluminum implanted 4H-SiC often shows an unexpected increase of the free hole density at elevated temperatures in Hall Effect measurements. Here we show that this phenomenon cannot solely be traced down to the Hall scattering factor and the presence of excited acceptor states. It is necessary to assume an additional defect center in the lower half of the band gap with ionization energies higher than that of aluminum to explain this behavior. Therefore, we investigated ion-implanted square van-der-Pauw samples with Hall Effect and complementary SIMS measurements. An analysis of the data using the neutrality equation reveals compensation ratios of 20 % to 90 %, depending on the aluminum concentration and the concentration of the deep defect center of up to 50 % of the doping.