Nitrogen and aluminum implantation in high resistivity silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366299
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4. 4H-SiC MESFET's with 42 GHz f/sub max/
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3. Effect of nitrogen ion implantation in semi insulating 6H-SiC and recrystallization probed by Raman scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-10
4. Recent progress in research of f-SiC codoped with N–B–Al pairs for optoelectronics;Journal of Semiconductors;2015-08
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