High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate-Reference-Cited by-同舟云学术

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Published:2015-07-28 Issue:4 Volume:118 Page:045705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Iwamoto Naoya¹,Azarov Alexander¹^ORCID,Ohshima Takeshi²,Moe Anne Marie M.³^ORCID,Svensson Bengt G.¹

Affiliation:

1. Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway

2. Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma, Japan

3. Washington Mills AS, N-7300 Orkanger, Norway

Funder

Norges Forskningsråd (Research Council of Norway)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4927040

Reference35 articles.

1. High-purity semi-insulating 4H-SiC for microwave device applications

2. J. W. Milligan , S. Sheppard , W. Pribble , Y.F. Wu , St. G. Müller , and J. W. Palmour , in Proceedings of the IEEE Radar Conference (2007), p. 960.

3. A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

4. Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

5. Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly efficient UV detection in a metal–semiconductor–metal detector with epigraphene;Applied Physics Letters;2022-05-09

2. Development of p-i-n radiation detectors based on semi-insulating 4H-SiC substrate via dual-face ion implantation;Solid-State Electronics;2022-01

3. Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC;Journal of Nanoscience and Nanotechnology;2021-03-01

4. Device performance of chemical vapor deposition monocrystal diamond radiation detectors correlated with the bulk diamond properties;Journal of Physics D: Applied Physics;2021-01-25

5. Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC;Materials Science Forum;2020-07