Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2767248
Reference17 articles.
1. Silicon carbide benefits and advantages for power electronics circuits and systems
2. Metal Schottky barrier contacts to alpha 6H‐SiC
3. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes
4. Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
5. Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
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