Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications-Reference-Cited by-同舟云学术

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Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

Published:1998-02 Issue: Volume:264-268 Page:89-96
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Rupp Roland¹,Wiedenhofer A.²,Friedrichs Peter¹,Peters Dethard³,Schörner Reinhold⁴,Stephani Dietrich⁴

Affiliation:

1. Infineon Technologies AG

2. Siemens AG, Corporate Technology

3. SiCED Electronics Development

4. SiCED Electronics Development GmbH & Co. KG

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.264-268.89.pdf

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1. Reduction of epitaxial defects on 4°-off 4HSiC homo-epitaxial growth by optimizing in-situ etching process;Superlattices and Microstructures;2016-11

2. SiC Films and Coatings;Silicon Carbide Biotechnology;2012

3. Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices;Chinese Physics Letters;2011-09

4. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition;Springer Handbook of Crystal Growth;2010

5. Reactive Flow in Halide Chemical Vapor Deposition of Silicon Carbide Epitaxial Films;Journal of Thermophysics and Heat Transfer;2008-10

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