Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/28/9/098101/pdf
Reference12 articles.
1. Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers
2. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
3. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
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2. Growth of 3C-SiC on Si(100) by LPCVD using a modified process after the clean step;Journal of Materials Science: Materials in Electronics;2016-03-19
3. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface;Chinese Physics B;2015-11
4. Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System;Chinese Physics Letters;2013-12
5. Non-UV Photoelectric Properties of the Ni/n-Si/N + -SiC Isotype Heterostructure Schottky Barrier Photodiode;Chinese Physics Letters;2013-09
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