Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2226988
Reference22 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
2. Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD
3. Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures
4. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency
5. High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy
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