Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3676284
Reference27 articles.
1. Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation
2. Application of the Finite-Difference Time-Domain Method to Sinusoidal Steady-State Electromagnetic-Penetration Problems
3. Effect of crystallographic dislocations on the reverse performance of 4H-SiC p–n diodes
4. Relativistic band structure calculation of cubic and hexagonal SiC polytypes
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1. Simulations of Interactions between Fast Neutrons and 4H-SiC Detectors;Materials Science Forum;2015-06
2. Optical and Electrical Simulations of Solar Cell Based on Silicon and Silicon Carbide;Materials Science Forum;2014-02
3. New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement;MRS Proceedings;2014
4. Surface damage of 6H–SiC originating from argon plasma irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-11
5. Deep ultraviolet detecting property of AlxZn1−xO alloy thin film as photocathode layer;Journal of Alloys and Compounds;2013-06
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