Affiliation:
1. Université d'Aix-Marseille
2. Centre CEA de Cadarache
Abstract
Among particle detectors, particle detectors based on the wide gap semiconductor materials are many used in the nuclear area. For the reliable uses in hard and severe environment, the 4H-SiC is mainly used to the realization of nuclear detector components. This is a part of the topic of the I_SMART European project which proposes to study the nuclear detection of the thermal and fast neutron and gamma rays. In this paper, we deal with the Monte Carlo simulation results of interactions between particles and 4H-SiC detector. In particular, simulation works present the results between fast neutron and 4H-SiC sensor with a comparison between the simulation and experimental results. This article tries to point out the effect of the space charge region depletion, in particular the electric field on the signal response strength.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. F. Nava, G. Bertuccio, A. Cavallini, E. Vittone, Meas. Sci. Technol. 19 (2008) 102001.
2. G. F. Knoll, Radiation Detection and Measurement, John Wiley & Sons (2010).
3. F. H. Ruddy, A.R. Dulloo, J. G. Seidel, M. K. Das, S. Ryu, and A. K. Agarwal, The Fast Neutron Response of 4H Silicon Carbide Semiconductor Radiation Detector, IEEE Transactions on Nuclear Science, Vol. 53, No. 3 (2006).
4. S. M Sze, Physics of Semiconductor Devices, John Wiley & Sons Inc., (1981).
5. S. Biondo, W. Vervisch, L. Ottaviani, O. Palais, Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations, J. Appl. Phys. 111, 024506 (2012).