The fast neutron response of 4H silicon carbide semiconductor radiation detectors-Reference-Cited by-同舟云学术

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The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Published:2006-06 Issue:3 Volume:53 Page:1666-1670
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Ruddy F.H.,Dulloo A.R.,Seidel J.G.,Das M.K.,Sei-Hyung Ryu ,Agarwal A.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/34478/01645085.pdf?arnumber=1645085

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Study on 4H-SiC Trench Schottky-Type Neutron Detector;IEEE Transactions on Instrumentation and Measurement;2024

4. Design and analysis of novel high-performance thick epitaxial SiC radiation detector with low operating voltage by multiple p-type buried layers;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-01

5. Performance of a thick 250 μm silicon carbide detector: stability and energy resolution;Journal of Instrumentation;2023-03-01

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