Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1352025
Reference16 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
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3. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
4. Native donors and acceptors in molecular‐beam epitaxial GaAs grown at 200 °C
5. Metastability of the Isolated Arsenic-Antisite Defect in GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface orientation as a control parameter for the growth of non-stoichiometric gallium arsenide;physica status solidi (a);2005-11-17
2. Interstitial to antisite defect conversion during the molecular beam epitaxial deposition onc(4 3 4) GaAs(001) surfaces;physica status solidi (a);2005-11-10
3. Molecular-dynamics-based model for the formation of arsenic interstitials during low–temperature growth of GaAs;Physical Review B;2005-08-04
4. Energetics of growth on thec(4×4)reconstructed GaAs(001) surface and antisite formation: Anab initioapproach;Physical Review B;2004-05-04
5. Theoretical and experimental energy barriers associated with the incorporation of excess As into GaAs();Surface Science;2002-08
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