Theoretical and experimental energy barriers associated with the incorporation of excess As into GaAs()-Reference-Cited by-同舟云学术

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Theoretical and experimental energy barriers associated with the incorporation of excess As into GaAs()

Published:2002-08 Issue:1 Volume:515 Page:219-225
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Kunsági-Máté Sándor,Marek Tamás,Schür Carsten,Strunk Horst P

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference25 articles.

1. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures

2. Low Temperature GaAs and Related Materials,1992

3. Symposium on Non-Stoichiometric III–V Compounds,1998

4. 2nd Symposium on Non-Stoichiometric III–V Compounds,1999

5. Low-Temperature Grown III-V Materials

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1. Surface orientation as a control parameter for the growth of non-stoichiometric gallium arsenide;physica status solidi (a);2005-11-17

2. Interstitial to antisite defect conversion during the molecular beam epitaxial deposition onc(4 3 4) GaAs(001) surfaces;physica status solidi (a);2005-11-10

3. Molecular-dynamics-based model for the formation of arsenic interstitials during low–temperature growth of GaAs;Physical Review B;2005-08-04

4. Energetics of growth on thec(4×4)reconstructed GaAs(001) surface and antisite formation: Anab initioapproach;Physical Review B;2004-05-04

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