Interstitial to antisite defect conversion during the molecular beam epitaxial deposition onc(4 3 4) GaAs(001) surfaces

Author:

Kunsági-Máté S.,Schür C.,Marek T.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures

2. Low Temperature GaAs and Related Materials, in: MRS Symposia Proceedings, Vol. 241, edited by G. L. Witt et al. (Material Research Society, Pittsburg, 1992).

3. Symposium on Non-Stoichiometric III-V Compounds, in: Series Physik Mikrostrukturierter Halbleiter, Vol. 6, edited by T. Marek et al. (Friedrich-Alexander-Universität Erlangen-Nürnberg, Lehrstuhl Mikrocharakterisierung, Erlangen, 1998).

4. 2 nd Symposium on Non-Stoichiometric III-V Compounds, in: Series Physik Mikrostrukturierter Halbleiter, Vol. 10, edited by T. Marek et al. (Friedrich-Alexander-Universität Erlangen-Nürnberg, Lehrstuhl Mikrocharakterisierung, Erlangen, 1999).

5. Low-Temperature Grown III-V Materials

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