Native donors and acceptors in molecular‐beam epitaxial GaAs grown at 200 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106813
Reference7 articles.
1. Hole photoionization cross sections of EL2 in GaAs
2. Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defect
3. Full‐wafer mapping of total and ionized EL2 concentration in semi‐insulating GaAs using infrared absorption
4. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
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