Hole photoionization cross sections of EL2 in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99020
Reference10 articles.
1. Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imaging
2. Experimental requirements for quantitative mapping of midgap flaw concentration in semi‐insulating GaAs wafers by measurement of near‐infrared transmittance
3. On the optical evaluation of the EL2 deep level concentration in semi‐insulating GaAs
4. Photoresponse of the EL2 absorption in undoped semi‐insulating GaAs
5. Metastable state of EL2 in theGaAs1−xPxalloy system
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