Passive Q-switching laser properties of Yb:Re3Ga5O12 (Re = Y, Lu, Gd) garnets with GaAs semiconductor saturable absorber-Reference-Cited by-同舟云学术

Passive Q-switching laser properties of Yb:Re3Ga5O12 (Re = Y, Lu, Gd) garnets with GaAs semiconductor saturable absorber

Published:2018-09 Issue: Volume:423 Page:1-5
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Han Wenjuan,Ma Yanjun,Dou Xiaodan,Wang Lisha,Xu Honghao,Liu Junhai

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Diode-pumped Yb:GGG laser: comparison with Yb:YAG

2. Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal

3. Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization

4. Diode-pumped passively mode-locked Yb:Y_3Ga_5O_12 laser

5. Growth and Characteristics of Yb-doped ${\rm Y}_{3}{\rm Ga}_{5}{\rm O}_{12}$ Laser Crystal

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3. Sellmeier dispersion and spectroscopic properties of Er3+-doped lutetium gallium garnet single crystal;Results in Physics;2021-11

4. Efficient Operation of an Yb:YAl3(BO3)4 Laser Passively Q-Switched With 2D MoS2 Saturable Absorber;Journal of Russian Laser Research;2021-01

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