Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819245
Reference40 articles.
1. LEDs for Lighting Applications
2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
3. Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
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