The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

Published:2017-04 Issue: Volume:628 Page:31-35
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Do Jae-Won,Jung Hyun-Wook,Shin Min Jeong,Ahn Ho-Kyun,Kim Haecheon,Kim Ryun-Hwi,Cho Kyu Jun,Chang Sung-Jae,Min Byoung-Gue,Yoon Hyung Sup,Kim Ji-Heon,Yang Jin-Mo,Lee Jung-Hee,Lim Jong-Won

Funder

ETRI

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

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3. A 40W AlGaN/GaN MMIC high power amplifier for C-band radar applications;Jeong;ETRI J.,2014

4. Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN;Sakai;AIP Adv.,2013

5. High-performance e-mode AlGaN/GaN HEMTs;Palacios;IEEE Electron Device Lett.,2006

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