A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3663571
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1. Room‐temperature electron mobility in strained Si/SiGe heterostructures
2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
3. Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD
4. Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructures
5. Two different growth modes of GaSb dots on GaAs(100) by droplet epitaxy
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