Two different growth modes of GaSb dots on GaAs(100) by droplet epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Radiative states in type-II GaSb/GaAs quantum wells
2. Molecular beam epitaxial growth of InSb, GaSb, and AlSb nanometer‐scale dots on GaAs
3. Carrier dynamics in type-II GaSb/GaAs quantum dots
4. Growth of stacked GaSb/GaAs self-assembled quantum dots by molecular beam epitaxy
5. Thin GaSb insertions and quantum dot formation in GaAs by MOCVD
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1. Controlled Growth of InAs/GaAs Nanostructures by Droplet Epitaxy;Journal of Nanoscience and Nanotechnology;2018-11-01
2. Effect of low-temperature-grown GaSb layer on formation of high-density and small GaSb islands on Si(100) substrate;physica status solidi (b);2016-03-04
3. Effect of Ga deposition rates on GaSb nanostructures grown by droplet epitaxy;Journal of Crystal Growth;2014-09
4. Metal-organic chemical vapor deposition of GaSb/GaAs quantum dots: the dependence of the morphology on growth temperature and vapour V/III ratio;Chemical Research in Chinese Universities;2014-01-09
5. Mechanisms of ring and island formation in lattice mismatched droplet epitaxy;Applied Physics Letters;2013-04
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