Growth of stacked GaSb/GaAs self-assembled quantum dots by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Molecular beam epitaxial growth of InSb, GaSb, and AlSb nanometer‐scale dots on GaAs
2. Density Control of GaSb/GaAs Self-assembled Quantum Dots (∼25nm) Grown by Molecular Beam Epitaxy
3. Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy
4. High structural quality Ga1−xInxSb/InAs strained‐layer superlattices grown on GaSb substrates
5. Sb-Induced Surface States on (100) Surfaces of III-V Semiconductors
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1. Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet;Scientific Reports;2021-04-08
2. Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates;Journal of Applied Physics;2019-08-28
3. Dynamical properties and charge accumulation in solar cells with embedded GaSb quantum dots;Japanese Journal of Applied Physics;2018-07-24
4. Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells;AIP Advances;2017-06
5. Photoluminescence studies of GaSbBi quantum dots grown on GaAs by liquid phase epitaxy;Current Applied Physics;2016-12
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