Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates-Reference-Cited by-同舟云学术

Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates

Published:2019-08-28 Issue:8 Volume:126 Page:084301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zon ¹^ORCID,Thainoi Supachok¹,Kiravittaya Suwit²^ORCID,Tandaechanurat Aniwat³,Kanjanachuchai Songphol¹^ORCID,Ratanathammaphan Somchai¹,Panyakeow Somsak¹,Ota Yasutomo⁴,Iwamoto Satoshi⁴,Arakawa Yasuhiko⁴

Affiliation:

1. Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand

2. Advanced Optical Technology Laboratory, Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok 65000, Thailand

3. International School of Engineering (ISE), Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand

4. Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo 153-8505, Japan

Funder

ASEAN University Network/Southeast Asia Engineering Education Development Network

Office of Naval Research Global

Thailand Research Fund

National Science and Technology Development Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link