Density Control of GaSb/GaAs Self-assembled Quantum Dots (∼25nm) Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Density Control of GaSb/GaAs Self-assembled Quantum Dots (∼25nm) Grown by Molecular Beam Epitaxy

Published:1998-02-15 Issue:Part 2, No. 2B Volume:37 Page:L203-L205
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Suzuki Kenji,Hogg Richard A.,Tachibana Koichi,Arakawa Yasuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of MBE growth parameters on GaSb/GaAs quantum dot morphology;Physica E: Low-dimensional Systems and Nanostructures;2020-04

2. Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates;Journal of Applied Physics;2019-08-28

3. Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE;Journal of Crystal Growth;2018-10

4. Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2016-09-03

5. Atom probe tomography analysis of different modes of Sb intermixing in GaSb quantum dots and wells;Applied Physics Letters;2013-09-16

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