Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate-Reference-Cited by-同舟云学术

Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate

Published:2015-06 Issue:6 Volume:5 Page:067128
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Hijikata Yasuto¹^ORCID,Asafuji Ryosuke¹^ORCID,Konno Ryotaro¹,Akasaka Yurie¹,Shinoda Ryo¹

Affiliation:

1. Division of Mathematics Electronics and Information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/6/1.4922536.pdf?itemId=/content/aip/journal/adva/5/6/10.1063/1.4922536&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference29 articles.

1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

2. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

3. Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

4. Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime

5. Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

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4. Microwave plasma oxidation kinetics of SiC based on fast oxygen exchange;Vacuum;2020-12

5. Electrically active deep levels formed by thermal oxidation of n-type 4H-SiC;Journal of Applied Physics;2019-05-28