Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4736801
Reference21 articles.
1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
2. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
3. Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure
4. Oxidation of Single‐Crystal Silicon Carbide: Part I . Experimental Studies
5. Modified Deal Grove model for the thermal oxidation of silicon carbide
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