Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching-Reference-Cited by-同舟云学术

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Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching

Published:2012-10 Issue:7 Volume:112 Page:073112
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Polyakov A. Y.,Jeon Dae-Woo,Smirnov N. B.,Govorkov A. V.,Kozhukhova E. A.,Yakimov E. B.,Lee In-Hwan

Funder

Russian Foundation for Basic Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4757942

Reference19 articles.

1. Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells

2. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

3. Photonic Crystal-Assisted Light Extraction from a Colloidal Quantum Dot/GaN Hybrid Structure

4. Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes

5. The fabrication of GaN-based nanopillar light-emitting diodes

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1. Role of surface treatments and localized surface plasmon nanoparticles on internal quantum efficiency of 800 nm diameter blue GaN/InGaN nano light emitting diodes;Journal of Alloys and Compounds;2024-09

2. Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm;Journal of Alloys and Compounds;2022-11

3. Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells;Journal of Alloys and Compounds;2021-07

4. Deep level study of beryllium implanted MOCVD homoepitaxial GaN;Japanese Journal of Applied Physics;2019-04-12

5. III‐Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes;physica status solidi (b);2019-02-21

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