Deep level study of beryllium implanted MOCVD homoepitaxial GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SC/a=SCCB04/pdf
Reference46 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN
3. First-principles studies of beryllium doping of GaN
4. Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
5. High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Depth profiling of E C – 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing;Applied Physics Express;2022-11-30
2. Effects of Thermal Annealing on Optical Properties of Be-Implanted GaN Thin Films by Spectroscopic Ellipsometry;Crystals;2020-05-30
3. Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN;physica status solidi (b);2020-04
4. Defect energy levels in carbon implanted n-type homoepitaxial GaN;Journal of Applied Physics;2019-09-28
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