Defect energy levels in carbon implanted n-type homoepitaxial GaN
Author:
Affiliation:
1. ABB Corporate Research, Segelhofstrasse 1K, 5405 Baden-Dättwil, Switzerland
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5109237
Reference40 articles.
1. Carbon impurities and the yellow luminescence in GaN
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4. “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs
5. Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
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1. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals;Applied Physics Letters;2024-06-03
2. Depth profiling of E C – 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing;Applied Physics Express;2022-11-30
3. Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy;Applied Physics Letters;2022-05-23
4. Current Status of Carbon‐Related Defect Luminescence in GaN;physica status solidi (a);2021-08-24
5. Deep levels in ion implanted n-type homoepitaxial GaN: Ion mass, tilt angle and dose dependence;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-03
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