Unified analytic model of direct and Fowler–Nordheim tunnel currents through ultrathin gate oxides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1330220
Reference15 articles.
1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
2. Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices
3. Analytic model of direct tunnel current through ultrathin gate oxides
4. The effect of nonparabolic energy bands on tunneling through thin insulating films
5. Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film
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