Analytic model of direct tunnel current through ultrathin gate oxides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372290
Reference30 articles.
1. 1.5 nm direct-tunneling gate oxide Si MOSFET's
2. The effect of nonparabolic energy bands on tunneling through thin insulating films
3. Tunneling through thin MOS structures: Dependence on energy (E‐κ)
4. Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
5. Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
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