Generation of interface states due to emission of leakage electrons from silicon substrate into silicon dioxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89224
Reference15 articles.
1. Avalanche degradation of hFE
2. THE INTRODUCTION OF CHARGE IN SiO2AND THE INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER‐BASE JUNCTION OF GATED TRANSISTORS
3. Emitter avalanche currents in gated transistors
4. An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO2
5. Avalanche Injection of Electrons into Insulating SiO2 Using MOS Structures
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1. Accurate measurement of the temperature of a junction;Review of Scientific Instruments;1987-01
2. The Phonon and Shock Mechanisms of Charge-Carrier Capture in Adsorption and Catalysis;Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics;1987
3. Hot-electron limited operating voltages for 0.8-µm MOSFET's;IEEE Transactions on Electron Devices;1982-10
4. Investigations of interface-state density in SiMOS structures;Solid-State Electronics;1982-03
5. New Mechanism of Electric Field Influence on Defect Creation in Non-Metallic Crystals;physica status solidi (b);1980-04-01
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