An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO2
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/8/i=13/a=011/pdf
Reference14 articles.
1. Electrical Characteristics of MOS Structures on <111> and <100> Oriented N-Type Silicon as Influenced by Use of Hydrogen Chloride during Thermal Oxidation
2. Hydrides and Hydroxyls in Thin Silicon Dioxide Films
3. A test for lateral nonuniformities in MOS devices using only capacitance curves
4. Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
Cited by 52 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability;Review of Scientific Instruments;2022-11-01
2. Effect of different types of substrate surface treatments on the graphene device performance;Surface and Interface Analysis;2021-10-17
3. An enhanced alneal process to produce SRV < 1 cm/s in 1 Ω cm n-type Si;Solar Energy Materials and Solar Cells;2017-12
4. Advanced Analysis of Silicon Insulator Interface Traps in MOSFET's with SiO2 and HfO2 as Gate Dielectrics;ECS Transactions;2009-05-15
5. Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions;Applied Surface Science;2006-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3