Measurement and modeling of boron diffusion in Si and strained Si1−xGexepitaxial layers during rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354209
Reference18 articles.
1. Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing
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3. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
4. Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors
5. Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps
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1. Ge fraction dependent improved thermal stability ofin situdoped boron in polycrystalline Si1−xGex (0⩽x⩽0.5) films on SiON;Journal of Applied Physics;2005-03
2. Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys;Applied Physics Letters;2004-01-19
3. Dopant layer abruptness in strained Si[sub 1−x]Ge[sub x] heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004
4. Isovalent Impurities;Computational Microelectronics;2004
5. Arsenic diffusion in relaxedSi1−xGex;Physical Review B;2003-10-24
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