Ge fraction dependent improved thermal stability ofin situdoped boron in polycrystalline Si1−xGex (0⩽x⩽0.5) films on SiON
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1854731
Reference20 articles.
1. A polycrystalline-Si/sub 1-x/Ge/sub x/-gate CMOS technology
2. Electrical properties of heavily doped polycrystalline silicon-germanium films
3. Investigation of poly-Si/sub 1-x/Ge/sub x/ for dual-gate CMOS technology
4. On the performance of in situ B-doped P+ poly-Si1−xGex gate material for nanometer scale MOS technology
5. High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates
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1. Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics;Japanese Journal of Applied Physics;2017-04-18
2. High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization;Applied Physics Letters;2016-12-05
3. Characterization of P-channel power trench MOSFETs with polycrystalline silicon germanium gate electrode for faster switching;Solid-State Electronics;2012-02
4. Miscellaneous methods and materials for silicon–germanium (SiGe) based heterostructures;Silicon–Germanium (SiGe) Nanostructures;2011
5. Microscopic studies of metal-induced lateral crystallization in SiGe;Applied Physics Letters;2010-05-03
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