Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2-Reference-Cited by-同舟云学术

Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2

Published:2008-08-11 Issue:6 Volume:93 Page:063508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Seo Y. J.,Kim K. C.,Kim H. D.,Joo M. S.,An H. M.,Kim T. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2970990

Reference13 articles.

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4. Nonvolatile memory using Al2O3 film with an embedded Al-rich layer

5. Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

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