Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures-Reference-Cited by-同舟云学术

Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

Published:2006-08-07 Issue:6 Volume:89 Page:063508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Tae Hun,Park Il Han,Lee Jong Duk,Shin Hyung Cheol,Park Byung-Gook

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2335619

Reference5 articles.

1. Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution

2. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley New York, 1981), p. 520.

3. Variations of trap states and dangling bonds in CVD Si3N4 layer on Si substrate by NH3/SiH4 ratio

4. Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer

5. Characterization of SONOS oxynitride nonvolatile semiconductor memory devices

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