Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124760
Reference10 articles.
1. Analysis of electrical and optical properties of insulating film–GaAs interfaces using MESFET‐type structures
2. Improvement of breakdown characteristics of a GaAs power field‐effect transistor using (NH4)2Sxtreatment
3. Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations
4. Low-frequency transconductance dispersion in InAlAs/InGaAs/InP HEMT's with single- and double-recessed gate structures
5. Failure mechanisms of AlGaAs/InGaAs pseudomorphic hemt's: Effects due to hot electrons and modulation of trapped charge
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