Failure mechanisms of AlGaAs/InGaAs pseudomorphic hemt's: Effects due to hot electrons and modulation of trapped charge-Reference-Cited by-同舟云学术

Failure mechanisms of AlGaAs/InGaAs pseudomorphic hemt's: Effects due to hot electrons and modulation of trapped charge

Published:1997-07 Issue:7 Volume:37 Page:1121-1129
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Meneghesso Gaudenzio,de Bortoli Eros,Sala Danila,Zanoni Enrico

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. A high performance 1.5 dB low noise GaAs PHEMT MMIC amplifier for low cost 1.5–8 GHz commercial applications;Morkner,1993

2. High performance Q-band 0.15 pm InGaAs HEMT MMIC LNA;Duh,1993

3. A high efficiency V-band monolithic HEMT power amplifier;Kasody;IEEE Microwave Guided Wave Lett.,1994

4. Trap-related effects in AlGaAs/GaAs HEMTs;Canali,1991

5. Stability of interfaces in pseudomorphic InGaAs HEMTs;Audren;Quality Reliab. Engng Int.,1992

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