Improvement of breakdown characteristics of a GaAs power field‐effect transistor using (NH4)2Sxtreatment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352931
Reference13 articles.
1. Drain avalanche breakdown in gallium arsenide MESFET's
2. The advanced unified defect model for Schottky barrier formation
3. Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds
4. A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2SxTreatment
5. Evidence for the passivation effect in (NH4)2Sx‐treated GaAs observed by slow positrons
Cited by 61 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Properties of LaAlO3 thin film on GaAs(100) treated by in situ NH3 plasma;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
2. Interfacial Characteristics for LaAlO3 Gate Dielectric on S Passivated GaAs Substrate;Advanced Materials Research;2012-12
3. Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers;Journal of Physics: Conference Series;2009-01-01
4. Ballistic electron and photocurrent transport in Au-molecular layer-GaAs diodes;Journal of Applied Physics;2007-07
5. XPS analysis of surface chemistry of near surface region of epiready GaAs(100) surface treated with (NH4)2Sx solution;Applied Surface Science;2006-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3