Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/146/i=1/a=012034/pdf
Reference14 articles.
1. MBE growth of AlGaAs/GaAs double- heterostructure light emitting diodes on GaAs(111)A and (211)A substrates using all-silicon doping
2. A new structure of 780 nm AlGaAs/GaAs high power laser diode with non-absorbing mirrors
3. Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate
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1. A comparative study of Ti and Cr based p-ohmic contacts on high power GaAs laser diodes;Vacuum;2018-06
2. Towards p × n transverse thermoelectrics: extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation;SPIE Proceedings;2016-03-07
3. The reliability study of III–V solar cell with copper based contacts;Solid-State Electronics;2015-12
4. Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells;IEEE Electron Device Letters;2014-12
5. Residual stress improvement of platinum thin film in Au/Pt/Ti/p-GaAs ohmic contact by RF sputtering power;Applied Surface Science;2012-11
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