A comparative study of Ti and Cr based p-ohmic contacts on high power GaAs laser diodes-Reference-Cited by-同舟云学术

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A comparative study of Ti and Cr based p-ohmic contacts on high power GaAs laser diodes

Published:2018-06 Issue: Volume:152 Page:128-131
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Mahajan Somna S.,Sharma Abhishek,Jain Deepti,Saini Hemant,Yadav Brajesh,Naik A.A.,Jain Alok

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference9 articles.

1. Diode lasers;Steele;Laser Focus World,2004

2. 510 Effect of free Carrier absorption on performance of 808 nm AlGaAs-based high- power laser diodes;Bulashevich;Semicond. Sci. Technol.,2007

3. High temperature alloyed Ag based ohmic contacts to p-HEMT;Mahajan,2008

4. High Power Diode Lasers, Fundamentals, Technology and Applications;Diehl,2000

5. Reliability and Degradation of Semiconductor Lasers and LEDs;Fukuda,1991

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1. Enhancement of longitudinal mode characteristic of quantum cascade laser by high-order tilted asymmetric surface grating;Vacuum;2023-11

2. Optoelectronic characterization of laser diodes with different electrode structures;Circuit World;2022-02-15

3. Polarization-Dependent Ultrafast Carrier Dynamics in GaAs with Anisotropic Response;Chinese Physics B;2021-12-11

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