A new structure of 780 nm AlGaAs/GaAs high power laser diode with non-absorbing mirrors
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s003390050925.pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Brief Review of Development and Techniques for High Power Semiconductor Lasers;Acta Optica Sinica;2021
2. Residual stress improvement of platinum thin film in Au/Pt/Ti/p-GaAs ohmic contact by RF sputtering power;Applied Surface Science;2012-11
3. Catastrophic Optical Damage in Quantum Dot Lasers;Quantum Dot Devices;2012
4. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers;Laser & Photonics Reviews;2011-03-07
5. Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers;Journal of Physics: Conference Series;2009-01-01
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