Use of thin AlGaAs and InGaAs stop‐etch layers for reactive ion etch processing of III‐V compound semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98947
Reference4 articles.
1. Selective Dry Etching of AlGaAs-GaAs Heterojunction
2. Reactive ion etch process with highly controllable GaAs‐to‐AlGaAs selectivity using SF6and SiCl4
3. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
4. An analytical study of etch and etch‐stop reactions for GaAs on AlGaAs in CCl2F2 plasma
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