Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas-Reference-Cited by-同舟云学术

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Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

Published:2012-01 Issue:1 Volume:30 Page:011504
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Perros Alexander,Bosund Markus,Sajavaara Timo,Laitinen Mikko,Sainiemi Lauri,Huhtio Teppo,Lipsanen Harri

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3664306

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

2. Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques;Microelectronic Engineering;2022-03

3. Silicon Micro-Channel Definition via ICP-RIE Plasma Etching Process Using Different Aluminum Hardmasks;Journal of Microelectromechanical Systems;2021-08

4. Atomic layer deposition of AlN using atomic layer annealing—Towards high-quality AlN on vertical sidewalls;Journal of Vacuum Science & Technology A;2021-05

5. Deep Reactive Ion Etching of Z-Cut Alpha Quartz for MEMS Resonant Devices Fabrication;Micromachines;2020-07-26

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