Heterojunction bipolar transistors implemented with GaInNAs materials-Reference-Cited by-同舟云学术

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Heterojunction bipolar transistors implemented with GaInNAs materials

Published:2002-07-17 Issue:8 Volume:17 Page:898-906
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Asbeck P M,Welty R J,Tu C W,Xin H P,Welser R E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property

2. Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

3. GaInNAs: a novel material for long-wavelength semiconductor lasers

4. GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy

5. Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells

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