Separation of two distinct fast interface state contributions at the (100)Si/SiO2interface using the conductance technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107461
Reference7 articles.
1. Interface trap transformation in radiation or hot-electron damaged MOS structures
2. Time evolution of capture cross sections of radiation‐induced Si/SiO2interface traps studied by single‐frequency ac conductance technique
3. MOS interface states: overview and physicochemical perspective
4. Fundamental chemical differences among Pb defects on (111) and (100) silicon
5. Observation of ‘‘slow’’ states in conductance measurements on silicon metal‐oxide‐semiconductor capacitors
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